Sanboh Lee | Materials Science | Best Researcher Award

Posted on 14/02/202514/02/2025 by Book of Award

Prof. Sanboh Lee | Materials Science | Best Researcher Award

National Tsing Hua University | Taiwan

Author Profile

🌱 Early Academic Pursuits

Prof. Sanboh Lee's journey into materials science began with a BS in Physics from Fu Jen Catholic University (1970), followed by an MS in Physics from National Tsing Hua University (1972). His academic curiosity led him to pursue a PhD in Materials Science at the University of Rochester (1980), where he built a strong foundation in material properties and mechanics.

💼 Professional Endeavors

With a career spanning decades, Prof. Lee has been a Professor at National Tsing Hua University (1985-2018) and served as an Adjunct Professor at the University of Science and Technology Beijing since 2005. His global research contributions include visiting scholar roles at Lehigh University and guest scientist positions at the National Institute of Standards and Technology (NIST). His consultancy work with institutions like the University of Rochester, Oak Ridge National Laboratory, and the University of Tennessee reflects his expertise in materials engineering.

🔬 Contributions and Research Focus

Prof. Lee’s research spans dislocation mechanics, optical and mechanical properties of polymers, hydrogen transport in low-carbon steels, and semiconductor devices. His groundbreaking studies include:

Dislocation and crack interactions in materials.
Gamma-ray effects on optical and mechanical properties.
Nano-imprint technology and micro-machining innovations.
Diffusion-induced and thermal stresses in materials.
Polymers and composite materials with enhanced mechanical and optical properties.
With over 280 journal publications and 150 conference presentations, Prof. Lee has significantly shaped modern material science.

🏆 Accolades and Recognition

Prof. Lee has received numerous international awards, including:

Lifetime Achievement Award (2022) by VDGOOD® Professional Association.
SAS Eminent Fellow Membership (2021).
Fellow, Materials Research Society-Taiwan (2009).
Tsing Hua Chair Professor (2006-).
Fellow, ASM International, USA (2004) for contributions to fracture mechanics and transport processes in metals and polymers.
Outstanding Special Research Fellow (2002) by the National Science Council of Taiwan.
Who’s Who in Science and Engineering and other global recognitions in research excellence.

🌍 Impact and Influence

As an influential figure in materials science, Prof. Lee has contributed to academic committees, international symposia, and editorial boards. He has been an advisor, editor, and organizer for numerous scientific events and research journals. His leadership roles in organizations such as TMS, Materials Chemistry and Physics, and the Asia Pacific Academy of Materials underscore his global impact in material research and engineering.

🔮 Legacy and Future Contributions

Prof. Lee’s pioneering work in materials science, fracture mechanics, and nanotechnology continues to inspire new generations of researchers. His advancements in nano-imprint technology, hydrogen transport, and semiconductor materials are paving the way for next-generation engineering applications. As a Professor Emeritus, his legacy endures through ongoing collaborations, mentorship, and research innovations that will influence future breakthroughs in materials engineering and nanotechnology.

Publicaations

📄 Kinetic Analysis of the Cracking Behavior in Methanol-Treated Poly(methyl methacrylate)/Functionalized Graphene Composites

Journal: Journal of Composites Science
Year: 2025
Authors: Bing-Hong Yang, Shou-Yi Chang, Yulin Zhang, Fuqian Yang, Sanboh Lee

📄 Cracking in UV-Irradiated Poly(methyl methacrylate)/Functionalized Graphene Composites: Solvent Effect

Journal: Journal of Polymer Research
Year: 2024
Authors: Bing-Hong Yang, Shou-Yi Chang, Yulin Zhang, Fuqian Yang, Sanboh Lee

📄 Analysis of the Thermal Aging Kinetics of Tallow, Chicken Oil, Lard, and Sheep Oil

Journal: Molecules
Year: 2024
Authors: Yun-Chuan Hsieh, Hao Ouyang, Yulin Zhang, Donyau Chiang, Fuqian Yang, Hsin-Lung Chen, Sanboh Lee

📄 Creep-Recovery Deformation of 304 Stainless-Steel Springs Under Low Forces

Journal: Mechanics of Materials
Year: 2024
Authors: Ming-Yen Tsai, Shou-Yi Chang, Yulin Zhang, Fuqian Yang, Sanboh Lee

📄 A Mechanical Model for Stress Relaxation of Polylactic Acid/Thermoplastic Polyurethane Blends

Journal: Journal of Composites Science
Year: 2024
Authors: Yi-Sheng Jhao, Hao Ouyang, Chien-Chao Huang, Fuqian Yang, Sanboh Lee

Zohming Liana | Engineering | Best Researcher Award

Posted on 31/07/202431/07/2024 by Book of Award

Mr. Zohming Liana | Engineering | Best Researcher Award

NIT Silchar | India

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Early Academic Pursuits 📚

Mr. Zohming Liana's academic journey began in 2009 when he completed his high school education at Maubawk High School under the Mizoram Board of School Education. Demonstrating a keen interest in the sciences, he pursued his intermediate studies at Synod Higher Secondary School, focusing on Physics, Chemistry, and Mathematics. This solid foundation paved the way for his enrollment in the B.Tech program at PES College of Engineering, Mandya, Karnataka, where he specialized in Electronics and Communication Engineering, graduating with an impressive 8.48 CGPA in 2015.

Professional Endeavors 💼

Upon completing his B.Tech, Mr. Liana continued his academic progression by enrolling in the M.Tech program at the National Institute of Technology (NIT), Mizoram. There, he specialized in Microelectronics and VLSI System Design, earning a 7.73 CGPA in 2019. His doctoral journey took him to NIT Silchar, where he pursued a Ph.D. focused on the "Modeling and Simulation of Graphene Nanoribbon Vertical TFET," under the supervision of Prof. Brinda Bhowmick and Dr. Bijit Choudhuri. His research utilized advanced software tools such as Silvaco ATLAS and Virtuoso Cadence.

Contributions and Research Focus 🧑‍🔬

Mr. Liana has made significant contributions to the field of electronics and communication engineering. His research primarily revolves around the modeling and simulation of semiconductor devices, with a particular emphasis on Graphene Nanoribbon Vertical Tunnel FETs (TFETs). His work includes projects like "Modeling for Minimization of Leakage in DG SOI NanoFET," guided by Dr. Rudra Sankar at NIT Mizoram, employing software such as Sentaurus TCAD, MATLAB, and Cadence.

Accolades and Recognition 🏅

Throughout his academic and professional journey, Mr. Liana has achieved notable recognition. He qualified for the National Eligibility Test in 2019 and has published extensively in esteemed international journals. His publications cover various aspects of semiconductor device performance, including the impact of graphene channels, gas sensing stability, and RF energy harvesting. He has also been granted a South African patent and contributed to a book chapter on advanced semiconductor devices.

Impact and Influence 🌐

Mr. Liana's research has had a considerable impact on the field of semiconductor device engineering. His work on the performance analysis of Graphene Nanoribbon Vertical Tunnel FETs has been published in high-impact journals, influencing both academic research and practical applications in microelectronics. His participation in international conferences has further disseminated his findings to a global audience.

Legacy and Future Contributions 🌟

Looking ahead, Mr. Liana's contributions to the field of electronics and communication engineering are poised to leave a lasting legacy. His ongoing research and innovative approach to semiconductor device modeling continue to push the boundaries of what is possible in microelectronics. As he progresses in his career, his work is expected to drive further advancements in the development of efficient, high-performance electronic devices, solidifying his role as a leading figure in his field.

Publications 📚

Device and Circuit-Level Performance Evaluation of DG-GNR-DMG Vertical Tunnel FET

📔 Journal: Micro and Nanostructures
📅 Year: 2024
👥 Contributors: Zohming Liana, Manas Ranjan Tripathy, Bijit Choudhuri, Brinda Bhowmick

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

📔 Journal: ECS Journal of Solid State Science and Technology
📅 Year: 2024
👥 Contributors: Mili, G., Liana, Z., Bhowmick, B.

Analysis of the Impact of Interface Trap Charges on the Analog/RF Performance of a Graphene Nanoribbon Vertical Tunnel FET

📔 Journal: Journal of Electronic Materials
📅 Year: 2023
👥 Contributors: Liana, Z., Choudhuri, B., Bhowmick, B.

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

📔 Journal: ECS Journal of Solid State Science and Technology
📅 Year: 2023
👥 Contributors: Liana, Z., Choudhuri, B., Bhowmick, B.

Drift Diffusion and Advance Hydrodynamic Simulation for the Design of Double-Gate SOI MOSFET in Nano-Scale Regime

📔 Conference: 2019 2nd International Conference on Advanced Computational and Communication Paradigms (ICACCP 2019)
📅 Year: 2019
👥 Contributors: Liana, Z., Khiangte, L., Dash, S., Dhar, R.S.

Kaustab Ghosh | Materials Science | Best Researcher Award

Posted on 01/07/202406/07/2024 by Book of Award

Dr. Kaustab Ghosh | Materials Science | Best Researcher Award

Vellore Institute of Technology | India

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Early Academic Pursuits

Dr. Kaustab Ghosh began his academic journey at Barrackpore Rastragure Surendranath College, affiliated with the University of Calcutta, where he completed his B.Sc in Electronic Science (August 1999 - April 2002). He furthered his studies at the University of Calcutta, earning an M.Sc in Electronic Science (August 2002 - June 2004) and later a PhD in the Department of Electronic Science (August 2005 - April 2009). His PhD research focused on the ultra-purification process of gallium for optoelectronic applications, where he developed a novel gallium purification technology.

Professional Endeavors

Dr. Ghosh's professional career began as an Assistant Professor at the Vellore Institute of Technology (VIT) from May 2011 to August 2012. He then progressed to Associate Professor from September 2012 to May 2021, and has been serving as a Professor since June 2022. His tenure at VIT has been marked by significant research and academic contributions in the fields of nano-optoelectronic materials, devices, and sensors.

Dr. Ghosh has also served as a Post-Doctoral Research Fellow at the Centre for Excellence in Nanoelectronics, Indian Institute of Technology Bombay (April 2009 - April 2011), where he focused on experimental characterization and theoretical modeling of InAs/GaAs quantum dots.

Contributions and Research Focus

Dr. Ghosh has made substantial contributions to the field of nano-optoelectronics. His research interests and contributions include:

Graphene Nanoribbon and Carbon Nanotube Sensors: He has worked extensively on the electronic structure computation of graphene nanoribbon and carbon nanotube-based sensors using atomistic modeling by non-equilibrium Green’s function and density functional theory.
Nanoscale Sensors and Solar Cells: Developed software products for nanoscale sensors and heterojunction thin film solar cell technology using machine learning. He has also fabricated low-cost Cu2SnS3/ZnS heterojunction solar cells using ultrasonic spray pyrolysis.
Quantum Dots for Biomedical Imaging: Engaged in collaborative research for the synthesis and characterization of PbS and CdSe quantum dots for biomedical imaging.
Quantum Dot Infrared Photodetectors: Principal investigator for the fabrication and performance optimization of InAs/GaAs quantum dot infrared photodetectors.
Nanoscale MOSFETs: Co-PI for projects focusing on first principle calculations of silicon band structure for device modeling and performance analysis of silicon-based nanoscale MOSFETs.

Accolades and Recognition

Dr. Ghosh has been recognized for his innovative work in the field. His project on InAs/GaAs quantum dot infrared photodetectors received a grant of Rs. 2 million from the Department of Science and Technology, Government of India. Another project, co-PIed by him, received a Rs. 4.5 million grant from the Science and Engineering Research Board (SERB), Government of India. He has also served as a Visiting Researcher at CIMAP/ CNRS/CEA/ENSICAEN/Normandie Université, Caen, France.

Impact and Influence

Dr. Ghosh has supervised four PhD students, contributing to the growth of the next generation of researchers in nano-optoelectronics. He has delivered numerous industrial and invited talks, sharing his expertise on water quality purification using nanoscale sensor technology and emerging trends in nanoelectronics for industrial applications.

Legacy and Future Contributions

Dr. Ghosh's work has set a foundation for future advancements in nano-optoelectronics, particularly in the development of quantum dot-based devices and nanoscale sensors. His contributions to the field are documented in numerous high-impact publications and patents, including a patent on graphene nanoribbon field effect transistors. As he continues his research and mentoring at VIT, Dr. Ghosh is poised to make further significant contributions to the advancement of nano-optoelectronics and its applications in various fields.

Notable Publications

Performance analysis of carbon nanotube and graphene nanoribbon based biochemical sensors in atomic scale 2024

Advancement and Challenges of Biosensing Using Field Effect Transistors 2022 (18)

Dr. Rupendra Kumar Sharma | Engineering | Best Researcher Award

Posted on 19/06/202419/06/2024 by Book of Award

Assist Prof Dr. Rupendra Kumar Sharma | Engineering | Best Researcher Award

Czech Technical University , Prague | Czech Republic

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Early Academic Pursuits

Dr. Rupendra Kumar Sharma embarked on his academic journey with a Master’s degree in Physics from C. C. S. University, Meerut, India, completed in 2005. He subsequently pursued a Ph.D. in Electronics at the University of Delhi, India, under the mentorship of Prof. Mridula Gupta. His doctoral research, completed in March 2010, focused on the “Two-dimensional analytical modeling and simulation of gate misalignment effect in fully depleted double gate MOSFET.” This foundational work laid the groundwork for his future contributions to semiconductor device modeling and simulation.

Professional Endeavors

Dr. Sharma’s professional career is marked by a diverse range of roles in both academia and industry. He is currently an Assistant Professor in the Department of Electrotechnology at the Faculty of Electrical Engineering, Czech Technical University in Prague, where he has been since December 2021. His recent research involves the experimental preparation of materials using Pulse Laser Deposition (PLD) for advanced silicon solar cell technology. Before this, he served as a Postdoctoral Fellow at the same institution, working on developing new technology for selective contacts to silicon absorbers based on silicon oxide passivation and metal oxides. From 2018 to 2020, Dr. Sharma was the Executive Director at OYO Hotels Netherlands B.V., managing hospitality activities in Amsterdam and surrounding areas. Prior to that, he was the Managing Director at Indo Western s.r.o., focusing on education consultancy and professional training.

Contributions and Research Focus

Dr. Sharma’s research has consistently focused on advanced semiconductor devices and materials, with his postdoctoral work spanning several prestigious institutions. At the Czech Technical University in Prague (2013-2015), he researched silicon carbide-based power devices. As a Marie-Curie Postdoctoral Fellow at the Technical University of Crete (2011-2013), he worked on compact modeling of nanoscale multi-gate MOSFETs and high-voltage MOSFETs. His earlier postdoctoral stint at the University of Bologna (2010-2011) involved modeling and characterization of hot-carrier stress degradation and thermal effects in MOSFET devices.

Accolades and Recognition

Dr. Sharma has been the recipient of numerous prestigious fellowships and awards, reflecting his contributions to the field: the Marie-Curie Postdoctoral Fellowship from the European Union (2011-2013), an Individual Research Fellowship from the University of Bologna (2010-2011), and Senior and Junior Research Fellowships from the Council of Scientific & Industrial Research (CSIR) and Defence Research & Development Organization (DRDO) in India

Impact and Influence

Dr. Sharma has significantly impacted the field of semiconductor research, particularly in the modeling and simulation of advanced MOSFETs and power devices. His work has led to over 394 citations, an h-index of 13, and an i10-index of 14, demonstrating the influence and relevance of his research in the academic community. As a peer-reviewer for the Microelectronics Journal, he continues to shape the field by ensuring the quality and integrity of published research.

Legacy and Future Contributions

Dr. Sharma’s legacy in semiconductor research is highlighted by his extensive publication record and his book, “Modeling and Simulation of Gate Misalignment Effect in MOSFETs,” published by Scholars' Press. His contributions have advanced understanding in the field and provided new insights into the behavior of semiconductor devices under various conditions.

Notable Publications

Below the Urbach Edge: Solar Cell Loss Analysis Based on Full External Quantum Efficiency Spectra 2023 (1)

Effect of UV Irradiation on the Growth of ZnO:Er Nanorods and Their Intrinsic Defects 2023 (3)

New metric for carrier selective contacts for silicon heterojunction solar cells 2022 (2)

Pankaj Kumar | Engineering | Best Researcher Award

Posted on 22/05/202423/05/2024 by Book of Award

Dr. Pankaj Kumar | Engineering | Best Researcher Award

Graphic Era Deemed to be University | India

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Early Academic Pursuits

Dr. Pankaj Kumar is an accomplished academic in the field of electronics and communication engineering. His early academic journey laid a strong foundation for his expertise and research interests. He pursued his undergraduate and postgraduate studies with a focus on electronics, honing his skills and knowledge in semiconductor devices and circuit design.

Professional Endeavors

Currently serving as an Assistant Professor (Research) in the Department of Electronics and Communication Engineering at Graphic Era Deemed to be University, Dehradun, India, Dr. Kumar has been actively involved in both teaching and research. His professional endeavors extend beyond academia, contributing to significant advancements in semiconductor technology and electronic devices.

Contributions and Research Focus

Dr. Kumar's research primarily focuses on the development and optimization of Tunnel Field-Effect Transistors (TFETs) and other advanced semiconductor devices. He has extensively worked on gate-all-around (GAA) TFETs, investigating their performance, reliability, and potential applications in biosensing and radiation-hardened electronics. His contributions include the development of models for the impact of various environmental and operational stresses on these devices.

Accolades and Recognition

Dr. Kumar has been recognized for his prolific contributions to the field through numerous publications in prestigious journals. His work has been featured in IEEE Sensors Journal, IEEE Transactions on Nanotechnology, Microelectronics Reliability, and Scientific Reports (Nature), among others. Additionally, he has presented his research findings at various international conferences, further establishing his reputation as a leading researcher in his domain.

Impact and Influence

The impact of Dr. Kumar's research is evidenced by his numerous publications and the citations they have garnered. His work on the detection of cancer using TFET biosensors and the study of radiation effects on semiconductor devices has significant implications for medical diagnostics and the development of radiation-hardened electronics. His research findings contribute to the broader understanding and advancement of semiconductor technology, influencing both academic research and practical applications.

Legacy and Future Contributions

Dr. Pankaj Kumar's legacy is marked by his persistent pursuit of innovation and excellence in electronics and communication engineering. His ongoing research promises further advancements in TFET technology and its applications. As he continues to explore new frontiers in semiconductor devices, his contributions are expected to pave the way for next-generation electronic systems with enhanced performance, reliability, and functionality.

Notable Publications

Trade-off analysis between g_m/I_D and f_T of GNR-FETs with single-gate and double-gate device structure 2024

Breast Cancer and Prostate Cancer Detection Considering Transconductance Generation Factor (g_m/I_DS) as a Sensing Metric for III–V Gate-All-Around Tunnel FET Biosensor 2023 (1)

Assessment of Negative Bias Temperature Instability Due to Interface and Oxide Trapped Charges in Gate-All-Around TFET Devices 2023 (2)

Hamid Reza Lashgari | Engineering | Best Researcher Award

Posted on 05/03/202405/03/2024 by Book of Award

Dr. Hamid Reza Lashgari | Engineering | Best Researcher Award

SRG Global Asset Care | Australia

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Early Academic Pursuits

Dr. Hamid Reza Lashgari embarked on his academic journey by completing a degree in Metallurgy and Materials Science and Engineering from the University of Tehran in 2008. He further pursued his academic aspirations by obtaining a Materials Engineering degree from UNSW, Sydney, graduating in 2015.

Professional Endeavors

Dr. Lashgari has cultivated a distinguished career path characterized by his roles as a Metallurgist/Materials Engineer at ALS/SRG Global, a Technical Officer at UNSW School of Materials Science, and a Materials Engineer at TECHNICO, Asset Integrity Department.

Contributions and Research Focus

With over 7 years of experience, Dr. Lashgari has specialized in failure analysis of metals and alloys, welding, corrosion analysis, and advanced materials characterization techniques. His research focuses on fitness-for-service assessment, risk-based inspection studies, and mechanical testing, among other areas.

Accolades and Recognition

Dr. Lashgari's contributions have been recognized through numerous honors and awards, including tuition fee scholarships and certificates of reviewing from esteemed journals. He has also received accolades for his pioneering work in establishing the Asset Integrity Department at TECHNICO.

Impact and Influence

Dr. Lashgari's research publications, which span various prestigious journals, attest to his significant impact on the field of materials engineering. His work has contributed to advancements in failure analysis, computational modeling, and the development of innovative materials.

Legacy and Future Contributions

Through his dedication to advancing materials engineering and his commitment to excellence, Dr. Lashgari has established a legacy of impactful research and professional achievements. His future contributions are poised to further enrich the field, driving innovation and addressing critical challenges in materials science and engineering.

Notable Publications

Failure Analysis of a Fractured Pallet Hook 2023