Zohming Liana | Engineering | Best Researcher Award

Mr. Zohming Liana | Engineering | Best Researcher Award

NIT Silchar | India

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Early Academic Pursuits 📚

Mr. Zohming Liana's academic journey began in 2009 when he completed his high school education at Maubawk High School under the Mizoram Board of School Education. Demonstrating a keen interest in the sciences, he pursued his intermediate studies at Synod Higher Secondary School, focusing on Physics, Chemistry, and Mathematics. This solid foundation paved the way for his enrollment in the B.Tech program at PES College of Engineering, Mandya, Karnataka, where he specialized in Electronics and Communication Engineering, graduating with an impressive 8.48 CGPA in 2015.

Professional Endeavors 💼

Upon completing his B.Tech, Mr. Liana continued his academic progression by enrolling in the M.Tech program at the National Institute of Technology (NIT), Mizoram. There, he specialized in Microelectronics and VLSI System Design, earning a 7.73 CGPA in 2019. His doctoral journey took him to NIT Silchar, where he pursued a Ph.D. focused on the "Modeling and Simulation of Graphene Nanoribbon Vertical TFET," under the supervision of Prof. Brinda Bhowmick and Dr. Bijit Choudhuri. His research utilized advanced software tools such as Silvaco ATLAS and Virtuoso Cadence.

Contributions and Research Focus 🧑‍🔬

Mr. Liana has made significant contributions to the field of electronics and communication engineering. His research primarily revolves around the modeling and simulation of semiconductor devices, with a particular emphasis on Graphene Nanoribbon Vertical Tunnel FETs (TFETs). His work includes projects like "Modeling for Minimization of Leakage in DG SOI NanoFET," guided by Dr. Rudra Sankar at NIT Mizoram, employing software such as Sentaurus TCAD, MATLAB, and Cadence.

Accolades and Recognition 🏅

Throughout his academic and professional journey, Mr. Liana has achieved notable recognition. He qualified for the National Eligibility Test in 2019 and has published extensively in esteemed international journals. His publications cover various aspects of semiconductor device performance, including the impact of graphene channels, gas sensing stability, and RF energy harvesting. He has also been granted a South African patent and contributed to a book chapter on advanced semiconductor devices.

Impact and Influence 🌐

Mr. Liana's research has had a considerable impact on the field of semiconductor device engineering. His work on the performance analysis of Graphene Nanoribbon Vertical Tunnel FETs has been published in high-impact journals, influencing both academic research and practical applications in microelectronics. His participation in international conferences has further disseminated his findings to a global audience.

Legacy and Future Contributions 🌟

Looking ahead, Mr. Liana's contributions to the field of electronics and communication engineering are poised to leave a lasting legacy. His ongoing research and innovative approach to semiconductor device modeling continue to push the boundaries of what is possible in microelectronics. As he progresses in his career, his work is expected to drive further advancements in the development of efficient, high-performance electronic devices, solidifying his role as a leading figure in his field.

 

Publications 📚 

Device and Circuit-Level Performance Evaluation of DG-GNR-DMG Vertical Tunnel FET

  • 📔 Journal: Micro and Nanostructures
  • 📅 Year: 2024
  • 👥 Contributors: Zohming Liana, Manas Ranjan Tripathy, Bijit Choudhuri, Brinda Bhowmick

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

  • 📔 Journal: ECS Journal of Solid State Science and Technology
  • 📅 Year: 2024
  • 👥 Contributors: Mili, G., Liana, Z., Bhowmick, B.

Analysis of the Impact of Interface Trap Charges on the Analog/RF Performance of a Graphene Nanoribbon Vertical Tunnel FET

  • 📔 Journal: Journal of Electronic Materials
  • 📅 Year: 2023
  • 👥 Contributors: Liana, Z., Choudhuri, B., Bhowmick, B.

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

  • 📔 Journal: ECS Journal of Solid State Science and Technology
  • 📅 Year: 2023
  • 👥 Contributors: Liana, Z., Choudhuri, B., Bhowmick, B.

Drift Diffusion and Advance Hydrodynamic Simulation for the Design of Double-Gate SOI MOSFET in Nano-Scale Regime

  • 📔 Conference: 2019 2nd International Conference on Advanced Computational and Communication Paradigms (ICACCP 2019)
  • 📅 Year: 2019
  • 👥 Contributors: Liana, Z., Khiangte, L., Dash, S., Dhar, R.S.

 

 

 

Dr. Rupendra Kumar Sharma | Engineering  | Best Researcher Award

Assist Prof Dr. Rupendra Kumar Sharma | Engineering  | Best Researcher Award

Czech Technical University , Prague | Czech Republic

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Early Academic Pursuits

Dr. Rupendra Kumar Sharma embarked on his academic journey with a Master’s degree in Physics from C. C. S. University, Meerut, India, completed in 2005. He subsequently pursued a Ph.D. in Electronics at the University of Delhi, India, under the mentorship of Prof. Mridula Gupta. His doctoral research, completed in March 2010, focused on the “Two-dimensional analytical modeling and simulation of gate misalignment effect in fully depleted double gate MOSFET.” This foundational work laid the groundwork for his future contributions to semiconductor device modeling and simulation.

Professional Endeavors

Dr. Sharma’s professional career is marked by a diverse range of roles in both academia and industry. He is currently an Assistant Professor in the Department of Electrotechnology at the Faculty of Electrical Engineering, Czech Technical University in Prague, where he has been since December 2021. His recent research involves the experimental preparation of materials using Pulse Laser Deposition (PLD) for advanced silicon solar cell technology. Before this, he served as a Postdoctoral Fellow at the same institution, working on developing new technology for selective contacts to silicon absorbers based on silicon oxide passivation and metal oxides. From 2018 to 2020, Dr. Sharma was the Executive Director at OYO Hotels Netherlands B.V., managing hospitality activities in Amsterdam and surrounding areas. Prior to that, he was the Managing Director at Indo Western s.r.o., focusing on education consultancy and professional training.

Contributions and Research Focus

Dr. Sharma’s research has consistently focused on advanced semiconductor devices and materials, with his postdoctoral work spanning several prestigious institutions. At the Czech Technical University in Prague (2013-2015), he researched silicon carbide-based power devices. As a Marie-Curie Postdoctoral Fellow at the Technical University of Crete (2011-2013), he worked on compact modeling of nanoscale multi-gate MOSFETs and high-voltage MOSFETs. His earlier postdoctoral stint at the University of Bologna (2010-2011) involved modeling and characterization of hot-carrier stress degradation and thermal effects in MOSFET devices.

Accolades and Recognition

Dr. Sharma has been the recipient of numerous prestigious fellowships and awards, reflecting his contributions to the field: the Marie-Curie Postdoctoral Fellowship from the European Union (2011-2013), an Individual Research Fellowship from the University of Bologna (2010-2011), and Senior and Junior Research Fellowships from the Council of Scientific & Industrial Research (CSIR) and Defence Research & Development Organization (DRDO) in India

Impact and Influence

Dr. Sharma has significantly impacted the field of semiconductor research, particularly in the modeling and simulation of advanced MOSFETs and power devices. His work has led to over 394 citations, an h-index of 13, and an i10-index of 14, demonstrating the influence and relevance of his research in the academic community. As a peer-reviewer for the Microelectronics Journal, he continues to shape the field by ensuring the quality and integrity of published research.

Legacy and Future Contributions

Dr. Sharma’s legacy in semiconductor research is highlighted by his extensive publication record and his book, “Modeling and Simulation of Gate Misalignment Effect in MOSFETs,” published by Scholars' Press. His contributions have advanced understanding in the field and provided new insights into the behavior of semiconductor devices under various conditions.

Notable Publications

Silicon heterojunction solar cells: Excellent candidate for low light illuminations 20214

Enhanced efficiency and stability of electron transport layer in perovskite tandem solar cells: Challenges and future perspectives 2023 (3)

Below the Urbach Edge: Solar Cell Loss Analysis Based on Full External Quantum Efficiency Spectra 2023 (1)

Effect of UV Irradiation on the Growth of ZnO:Er Nanorods and Their Intrinsic Defects 2023 (3)

New metric for carrier selective contacts for silicon heterojunction solar cells 2022 (2)