Mr. Zohming Liana | Engineering | Best Researcher Award
NIT Silchar | India
Author Profile
Early Academic Pursuits π
Mr. Zohming Liana's academic journey began in 2009 when he completed his high school education at Maubawk High School under the Mizoram Board of School Education. Demonstrating a keen interest in the sciences, he pursued his intermediate studies at Synod Higher Secondary School, focusing on Physics, Chemistry, and Mathematics. This solid foundation paved the way for his enrollment in the B.Tech program at PES College of Engineering, Mandya, Karnataka, where he specialized in Electronics and Communication Engineering, graduating with an impressive 8.48 CGPA in 2015.
Professional Endeavors πΌ
Upon completing his B.Tech, Mr. Liana continued his academic progression by enrolling in the M.Tech program at the National Institute of Technology (NIT), Mizoram. There, he specialized in Microelectronics and VLSI System Design, earning a 7.73 CGPA in 2019. His doctoral journey took him to NIT Silchar, where he pursued a Ph.D. focused on the "Modeling and Simulation of Graphene Nanoribbon Vertical TFET," under the supervision of Prof. Brinda Bhowmick and Dr. Bijit Choudhuri. His research utilized advanced software tools such as Silvaco ATLAS and Virtuoso Cadence.
Contributions and Research Focus π§βπ¬
Mr. Liana has made significant contributions to the field of electronics and communication engineering. His research primarily revolves around the modeling and simulation of semiconductor devices, with a particular emphasis on Graphene Nanoribbon Vertical Tunnel FETs (TFETs). His work includes projects like "Modeling for Minimization of Leakage in DG SOI NanoFET," guided by Dr. Rudra Sankar at NIT Mizoram, employing software such as Sentaurus TCAD, MATLAB, and Cadence.
Accolades and Recognition π
Throughout his academic and professional journey, Mr. Liana has achieved notable recognition. He qualified for the National Eligibility Test in 2019 and has published extensively in esteemed international journals. His publications cover various aspects of semiconductor device performance, including the impact of graphene channels, gas sensing stability, and RF energy harvesting. He has also been granted a South African patent and contributed to a book chapter on advanced semiconductor devices.
Impact and Influence π
Mr. Liana's research has had a considerable impact on the field of semiconductor device engineering. His work on the performance analysis of Graphene Nanoribbon Vertical Tunnel FETs has been published in high-impact journals, influencing both academic research and practical applications in microelectronics. His participation in international conferences has further disseminated his findings to a global audience.
Legacy and Future Contributions π
Looking ahead, Mr. Liana's contributions to the field of electronics and communication engineering are poised to leave a lasting legacy. His ongoing research and innovative approach to semiconductor device modeling continue to push the boundaries of what is possible in microelectronics. As he progresses in his career, his work is expected to drive further advancements in the development of efficient, high-performance electronic devices, solidifying his role as a leading figure in his field.
Publications πΒ
Device and Circuit-Level Performance Evaluation of DG-GNR-DMG Vertical Tunnel FET
- π Journal: Micro and Nanostructures
- π Year: 2024
- π₯ Contributors: Zohming Liana, Manas Ranjan Tripathy, Bijit Choudhuri, Brinda Bhowmick
Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor
- π Journal: ECS Journal of Solid State Science and Technology
- π Year: 2024
- π₯ Contributors: Mili, G., Liana, Z., Bhowmick, B.
Analysis of the Impact of Interface Trap Charges on the Analog/RF Performance of a Graphene Nanoribbon Vertical Tunnel FET
- π Journal: Journal of Electronic Materials
- π Year: 2023
- π₯ Contributors: Liana, Z., Choudhuri, B., Bhowmick, B.
Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing
- π Journal: ECS Journal of Solid State Science and Technology
- π Year: 2023
- π₯ Contributors: Liana, Z., Choudhuri, B., Bhowmick, B.
Drift Diffusion and Advance Hydrodynamic Simulation for the Design of Double-Gate SOI MOSFET in Nano-Scale Regime
- π Conference: 2019 2nd International Conference on Advanced Computational and Communication Paradigms (ICACCP 2019)
- π Year: 2019
- π₯ Contributors: Liana, Z., Khiangte, L., Dash, S., Dhar, R.S.