Minoo Eghtesadi | Engineering | Best Researcher Award

Mrs. Minoo Eghtesadi | Engineering | Best Researcher Award

University of Catania | Italy

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Early Academic Pursuits 🎓

Mrs. Minoo Eghtesadi's journey in the field of electronics began with a Bachelor of Science in Electronic Engineering from Khajeh Nasir Toosi University of Technology, Tehran, where she ranked among the top undergraduate students. She further honed her expertise by pursuing a Master of Science in Electronic Engineering at Iran University of Science and Technology (IUST), where she excelled academically, ranking third among her peers.

Professional Endeavors 💼

Mrs. Eghtesadi has accumulated valuable professional experience in the field of electronics. She worked as an Electronic Engineer at MDF Group in Tehran, where she was involved in various roles, including content creation for social networks, web design, social network management, and marketing content development. Her experience also extended to import and export operations, showcasing her versatility in both technical and managerial capacities.

Contributions and Research Focus 🔬

Mrs. Eghtesadi’s research primarily focuses on Analog and RFIC (Radio Frequency Integrated Circuit) Design, with a particular interest in mm-wave IC Design. Her Ph.D. research at the University of Pavia & University of Catania revolves around the design, fabrication, and characterization of 28-nm CMOS ICs for ultra-low-power 60-GHz receivers, aimed at high bit-rate communication applications. Her earlier research includes designing a concurrent dual-frequency Low Noise Amplifier (LNA) for GPS/GLONASS receivers, as well as developing an RFID Reader with an impressive range exceeding 100 meters.

Accolades and Recognition 🏆

Throughout her academic and professional career, Mrs. Eghtesadi has received several prestigious accolades. Most notably, she was awarded the Gold Leaf Award for her paper titled “A 28-nm CMOS 60-GHz LNA for OOK Low Power Receivers” at the 19th International Conference on PhD Research in Microelectronics and Electronics (PRIME2024) held in Cyprus. This recognition underscores her significant contributions to the field of microelectronics.

Impact and Influence 🌍

Mrs. Eghtesadi’s research and professional activities have had a profound impact on the field of electronics, particularly in the areas of RFIC design and mm-wave technology. Her work on low-noise amplifiers and RFIC design for high-frequency applications is paving the way for advancements in communication technology, influencing both academic research and industry practices.

Legacy and Future Contributions 🔮

As Mrs. Eghtesadi continues her Ph.D. research, she is poised to make further contributions to the field of micro and nano-electronics. Her future work will likely explore new frontiers in RFIC design, potentially leading to innovations in wireless communication technologies. With her strong academic background, professional experience, and research expertise, Mrs. Eghtesadi is well-positioned to leave a lasting legacy in the world of electronics.

 

Publications 📚


📜A Pseudo-Differential LNA with Noise Improvement Techniques for Concurrent Multi-Band GNSS Applications
Author(s): M. Eghtesadi, M.R. Mosavi, E. Ragonese
Journal: Electronics (Switzerland)
Year: 2024


📜A 28-nm CMOS 60-GHz LNA for OOK Low-Power Receivers
Author(s): M. Eghtesadi, G. Giustolisi, S. Pennisi, E. Ragonese
Conference: 2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME 2024)
Year: 2024


📜A Concurrent Dual-Band Low Noise Amplifier for GNSS Receivers
Author(s): M. Safari, M. Eghtesadi, M.R. Mosavi
Journal: Iranian Journal of Electrical and Electronic Engineering
Year: 2016


 

Dr. Rupendra Kumar Sharma | Engineering  | Best Researcher Award

Assist Prof Dr. Rupendra Kumar Sharma | Engineering  | Best Researcher Award

Czech Technical University , Prague | Czech Republic

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Early Academic Pursuits

Dr. Rupendra Kumar Sharma embarked on his academic journey with a Master’s degree in Physics from C. C. S. University, Meerut, India, completed in 2005. He subsequently pursued a Ph.D. in Electronics at the University of Delhi, India, under the mentorship of Prof. Mridula Gupta. His doctoral research, completed in March 2010, focused on the “Two-dimensional analytical modeling and simulation of gate misalignment effect in fully depleted double gate MOSFET.” This foundational work laid the groundwork for his future contributions to semiconductor device modeling and simulation.

Professional Endeavors

Dr. Sharma’s professional career is marked by a diverse range of roles in both academia and industry. He is currently an Assistant Professor in the Department of Electrotechnology at the Faculty of Electrical Engineering, Czech Technical University in Prague, where he has been since December 2021. His recent research involves the experimental preparation of materials using Pulse Laser Deposition (PLD) for advanced silicon solar cell technology. Before this, he served as a Postdoctoral Fellow at the same institution, working on developing new technology for selective contacts to silicon absorbers based on silicon oxide passivation and metal oxides. From 2018 to 2020, Dr. Sharma was the Executive Director at OYO Hotels Netherlands B.V., managing hospitality activities in Amsterdam and surrounding areas. Prior to that, he was the Managing Director at Indo Western s.r.o., focusing on education consultancy and professional training.

Contributions and Research Focus

Dr. Sharma’s research has consistently focused on advanced semiconductor devices and materials, with his postdoctoral work spanning several prestigious institutions. At the Czech Technical University in Prague (2013-2015), he researched silicon carbide-based power devices. As a Marie-Curie Postdoctoral Fellow at the Technical University of Crete (2011-2013), he worked on compact modeling of nanoscale multi-gate MOSFETs and high-voltage MOSFETs. His earlier postdoctoral stint at the University of Bologna (2010-2011) involved modeling and characterization of hot-carrier stress degradation and thermal effects in MOSFET devices.

Accolades and Recognition

Dr. Sharma has been the recipient of numerous prestigious fellowships and awards, reflecting his contributions to the field: the Marie-Curie Postdoctoral Fellowship from the European Union (2011-2013), an Individual Research Fellowship from the University of Bologna (2010-2011), and Senior and Junior Research Fellowships from the Council of Scientific & Industrial Research (CSIR) and Defence Research & Development Organization (DRDO) in India

Impact and Influence

Dr. Sharma has significantly impacted the field of semiconductor research, particularly in the modeling and simulation of advanced MOSFETs and power devices. His work has led to over 394 citations, an h-index of 13, and an i10-index of 14, demonstrating the influence and relevance of his research in the academic community. As a peer-reviewer for the Microelectronics Journal, he continues to shape the field by ensuring the quality and integrity of published research.

Legacy and Future Contributions

Dr. Sharma’s legacy in semiconductor research is highlighted by his extensive publication record and his book, “Modeling and Simulation of Gate Misalignment Effect in MOSFETs,” published by Scholars' Press. His contributions have advanced understanding in the field and provided new insights into the behavior of semiconductor devices under various conditions.

Notable Publications

Silicon heterojunction solar cells: Excellent candidate for low light illuminations 20214

Enhanced efficiency and stability of electron transport layer in perovskite tandem solar cells: Challenges and future perspectives 2023 (3)

Below the Urbach Edge: Solar Cell Loss Analysis Based on Full External Quantum Efficiency Spectra 2023 (1)

Effect of UV Irradiation on the Growth of ZnO:Er Nanorods and Their Intrinsic Defects 2023 (3)

New metric for carrier selective contacts for silicon heterojunction solar cells 2022 (2)