Graphic Era Deemed to be University | India
Author Profile
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Early Academic Pursuits
Dr. Pankaj Kumar is an accomplished academic in the field of electronics and communication engineering. His early academic journey laid a strong foundation for his expertise and research interests. He pursued his undergraduate and postgraduate studies with a focus on electronics, honing his skills and knowledge in semiconductor devices and circuit design.
Professional Endeavors
Currently serving as an Assistant Professor (Research) in the Department of Electronics and Communication Engineering at Graphic Era Deemed to be University, Dehradun, India, Dr. Kumar has been actively involved in both teaching and research. His professional endeavors extend beyond academia, contributing to significant advancements in semiconductor technology and electronic devices.
Contributions and Research Focus
Dr. Kumar's research primarily focuses on the development and optimization of Tunnel Field-Effect Transistors (TFETs) and other advanced semiconductor devices. He has extensively worked on gate-all-around (GAA) TFETs, investigating their performance, reliability, and potential applications in biosensing and radiation-hardened electronics. His contributions include the development of models for the impact of various environmental and operational stresses on these devices.
Accolades and Recognition
Dr. Kumar has been recognized for his prolific contributions to the field through numerous publications in prestigious journals. His work has been featured in IEEE Sensors Journal, IEEE Transactions on Nanotechnology, Microelectronics Reliability, and Scientific Reports (Nature), among others. Additionally, he has presented his research findings at various international conferences, further establishing his reputation as a leading researcher in his domain.
Impact and Influence
The impact of Dr. Kumar's research is evidenced by his numerous publications and the citations they have garnered. His work on the detection of cancer using TFET biosensors and the study of radiation effects on semiconductor devices has significant implications for medical diagnostics and the development of radiation-hardened electronics. His research findings contribute to the broader understanding and advancement of semiconductor technology, influencing both academic research and practical applications.
Legacy and Future Contributions
Dr. Pankaj Kumar's legacy is marked by his persistent pursuit of innovation and excellence in electronics and communication engineering. His ongoing research promises further advancements in TFET technology and its applications. As he continues to explore new frontiers in semiconductor devices, his contributions are expected to pave the way for next-generation electronic systems with enhanced performance, reliability, and functionality.
Notable Publications
Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure 2024
Breast Cancer and Prostate Cancer Detection Considering Transconductance Generation Factor (gm/IDS) as a Sensing Metric for III–V Gate-All-Around Tunnel FET Biosensor 2023 (1)
Impact of hole trap-detrap mechanism on X-ray irradiation induced threshold voltage shift of radiation-hardened GAA TFET device 2023 (1)
Assessment of interface trapped charge induced threshold voltage hysteresis effect in gate-all-around TFET 2023 (1)
Assessment of Negative Bias Temperature Instability Due to Interface and Oxide Trapped Charges in Gate-All-Around TFET Devices 2023 (2)